ty n-channel RUR040N02 z structure mosfet z features 1) 1.5v drive 2) low on-resistance. 3) built-in g-s pr otection diode. 4) small surface mount package (tsmt3). z application switching z packaging specifications package code taping basic ordering unit (pieces) RUR040N02 tl 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol 20 v v gss 10 a i d 4.0 a i dp 8.0 a i s 0.8 a i sp 8.0 w p d 1.0 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) z thermal resistance c / w rth (ch-a) 125 parameter symbol limits unit channel to ambient ? mounted on a ceramic board ? each lead has same dimensions (1) gate (2) source (3) drain tsmt3 abbreviated symbol : xf z dimension s ( unit : mm ) (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) z e q uivalent circuit product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ?? 10 av gs = 10v, v ds =0v v dd 10v 20 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 20v, v gs =0v 0.3 ? 1.3 v v ds = 10v, i d = 1ma ? 25 35 i d = 4.0a, v gs = 4.5v ? 33 46 m ? m ? m ? i d = 4.0a, v gs = 2.5v ? 42 59 i d = 2.0a, v gs = 1.8v m ? ? 55 110 i d = 0.8a, v gs = 1.5v 5.0 ?? sv ds = 10v, i d = 4.0a ? 680 ? pf v ds = 10v ? 150 90 ? pf v gs =0v ? 10 ? pf f=1mhz ? 30 ? ns ? 50 ? ns ? 60 ? ns ? 8 ? ns ? 1.8 ? nc ? 1.3 ? nc v gs = 4.5v ?? nc i d = 4.0a, v dd 10 v i d = 2.0a, v gs = 4.5v r l 5 ? , r g =10 ? r l 2.5 ? , r g =10 ? ? pulsed ? ? ? ? ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v forward voltage i s = 0.8a, v gs =0v parameter symbol min. typ. max. unit conditions ? pulsed ? RUR040N02 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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